FDS6680A
Manufacturer:
On Semiconductor
Mfr.Part #:
FDS6680A
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:1 2.5 W 30 V Continuous Drain Current (ID):12.5 A 23 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 30 V |
| Length | 5 mm |
| Width | 4 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 9.5 MΩ |
| Height | 1.5 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 12.5 A |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2 V |
| Number of Channels | 1 |
| Input capacitance | 1.62 nF |
| Continuous Drain Current (ID) | 12.5 A |
| Rds On Max | 9.5 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 10 ns |
| Turn-Off Delay Time | 27 ns |
| Element Configuration | Single |
| Fall Time | 15 ns |
| Rise Time | 5 ns |
| Dual Supply Voltage | 30 V |
| Gate Charge | 23 nC |
| Drain to Source Resistance | 9.5 mΩ |
| Nominal Vgs | 2 V |
| Recovery Time | 28 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 28
Distributors
pcbx
pcbxUnit Price$0.76627
Ext.Price$0.76627
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.76627 | $0.76627 |
| 10 | $0.62189 | $6.21890 |
| 25 | $0.57147 | $14.28675 |
| 50 | $0.52514 | $26.25700 |
| 100 | $0.48258 | $48.25800 |
| 300 | $0.46028 | $138.08400 |
| 500 | $0.43902 | $219.51000 |
| 1000 | $0.41642 | $416.42000 |